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| PD - 96109 IRF7342QPBF Advanced Process Technology Ultra Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150C Operating Temperature Automotive [Q101] Qualified Lead-Free HEXFET(R) Power MOSFET S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -55V RDS(on) = 0.105 6 5 Top View Description Specifically designed for Automotive applications, these HEXFET(R) Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TC = 25C ID @ TC = 70C IDM PD @TC = 25C PD @TC = 70C VGS VGSM EAS dv/dt TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10s Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. -55 -3.4 -2.7 -27 2.0 1.3 0.016 20 30 114 5.0 -55 to + 150 Units V A W W/C V V V/ns C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Typ. --- Max. 62.5 Units C/W www.irf.com 1 07/23/07 IRF7342QPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -55 --- --- --- -1.0 3.3 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = -250A -0.054 --- V/C Reference to 25C, ID = -1mA 0.095 0.105 VGS = -10V, ID = -3.4A 0.150 0.170 VGS = -4.5V, ID = -2.7A --- --- V VDS = VGS, ID = -250A --- --- S VDS = -10V, ID = -3.1A --- -2.0 VDS = -55V, VGS = 0V A --- -25 VDS = -55V, VGS = 0V, TJ = 55C --- -100 VGS = -20V nA --- 100 VGS = 20V 26 38 ID = -3.1A 3.0 4.5 nC VDS = -44V 8.4 13 VGS = -10V, See Fig. 10 14 22 VDD = -28V 10 15 ID = -1.0A ns 43 64 RG = 6.0 22 32 RD = 16, 690 --- VGS = 0V 210 --- pF VDS = -25V 86 --- = 1.0MHz, See Fig. 9 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- 54 85 -2.0 A -27 -1.2 80 130 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.0A, VGS = 0V TJ = 25C, IF = -2.0A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by Starting TJ = 25C, L = 20mH max. junction temperature. ( See fig. 11 ) RG = 25, IAS = -3.4A. (See Figure 8) ISD -3.4A, di/dt -150A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec 2 www.irf.com IRF7342QPBF 100 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 10 VGS -15V -12V -10V -8.0V -6.0V -4.5V -4.0V -3.5V BOTTOM -3.0V TOP 100 10 VGS -15V -12V -10V -8.0V -6.0V -4.5V -4.0V -3.5V BOTTOM -3.0V TOP 1 -3.0V -3.0V 1 0.1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 0.1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 -I D , Drain-to-Source Current (A) -ISD , Reverse Drain Current (A) TJ = 25 C TJ = 150 C 10 10 TJ = 150 C TJ = 25 C 1 1 V DS = -25V 20s PULSE WIDTH 3 4 5 6 7 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 -VGS , Gate-to-Source Voltage (V) -VSD ,Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage www.irf.com 3 IRF7342QPBF 2.0 1.5 R DS (on) , Drain-to-Source On Resistance() RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -3.4 A 0.240 0.200 VGS = -4.5V 0.160 1.0 0.5 0.120 VGS = -10V 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 0.080 0 2 4 6 8 10 12 TJ , Junction Temperature ( C) -ID , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current 0.45 EAS , Single Pulse Avalanche Energy (mJ) RDS(on) , Drain-to-Source On Resistance ( ) 300 250 0.35 ID -1.5A -2.7A BOTTOM -3.4A TOP 200 0.25 150 I D = -3.4 A 0.15 100 50 0.05 2 5 8 11 14 A 0 25 -V GS , Gate-to-Source Voltage (V) Starting TJ , Junction Temperature ( C) 50 75 100 125 150 Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum Avalanche Energy Vs. Drain Current 4 www.irf.com IRF7342QPBF 1200 960 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = -3.1A 16 VDS =-48V VDS =-30V VDS =-12V C, Capacitance (pF) 720 Ciss 12 480 8 Coss 240 4 Crss 0 1 10 100 0 0 10 20 30 40 --VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 0.1 0.0001 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7342QPBF SO-8 Package Outline Dimensions are shown in millimeters (inches) 9 6 ' & ! % " $ 7 9DH 6 6 i DI8C@T HDI H6Y $"! %'' # " &$ '( (' ! (' (%' HDGGDH@U@ST HDI H6Y "$ &$ "" ( #' !$ $ !$ $ % @ $ # C !$Ab dA 6 p 9 @ r r C #(& $&# $AA76TD8 !$AA76TD8 !!'# !## (( % A (% $ A' "' # !&AA76TD8 %"$AA76TD8 $' %! !$ # A $ !& A' %Y r F G r 6 FAA#$ 8 Ab#dA 'YAG & 'YAp 'YAi !$Ab dA 6 867 IPU@T) AA9DH@ITDPIDIBAEAUPG@S6I8DIBAQ@SA6TH@A #$H ((# !AA8PIUSPGGDIBA9DH@ITDPI)AHDGGDH@U@S "AA9DH@ITDPITA6S@ATCPXIADIAHDGGDH@U@STAbDI8C@Td #AAPVUGDI@A8PIAPSHTAUPAE@9@8APVUGDI@AHT !66 $AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A $Ab%d %AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A!$Ab d &AAA9DH@ITDPIADTAUC@AG@IBUCAPAAG@69AAPSATPG9@SDIBAUP AAAAA6ATV7TUS6U@ APPUQSDIU 'YA&!Ab!'d %#%Ab!$$d "YA !&Ab$d 'YA &'Ab&d SO-8 Part Marking @Y6HQG@)AUCDTADTA6IADSA& AHPTA@U DIU@SI6UDPI6G S@8UDAD@S GPBP ;;;; ) 96U@A8P9@AXX QA2A9@TDBI6U@TAG@69AS@@ QSP9V8UAPQUDPI6G A2AG6TUA9DBDUAPAAUC@A@6S XXA2AX@@F 6A2A6TT@H7GATDU@A8P9@ GPUA8P9@ Q6SUAIVH7@S www.irf.com Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 6 IRF7342QPBF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/2007 www.irf.com 7 |
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